Plasma cleaning of Si surfaces for TiO2
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Akira Shibata; Kazumaro Kita; Kunio Okimura
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Article
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2000
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John Wiley and Sons
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English
β 155 KB
It has been shown that rutile-rich TiO 2 films with excellent electrical and chemical characteristics can be prepared by deposition on Si surfaces at low temperature, using ionized oxygen gas with an admixture of He gas. The Si surfaces were cleaned by etching with Ar gas before film deposition. We