The damage produced by implantation of Er ions of 400 keV at a fluence of 5 ร 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after ann
โฆ LIBER โฆ
Surface segregation of zirconium in oxygen-processed ZrW(111) system at high temperatures
โ Scribed by S.C Lee; Y Irokawa; M Inoue; R Shimizu
- Book ID
- 116068116
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 489 KB
- Volume
- 359
- Category
- Article
- ISSN
- 0039-6028
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Study on preventing segregation of erbiu
โ
Xifeng Qin; Ming Chen; Xuelin Wang; Gang Fu; Yi Liang; Shaomei Zhang
๐
Article
๐
2010
๐
Elsevier Science
๐
English
โ 251 KB
The role of aluminum in the interaction
โ
Jacques Jupille
๐
Article
๐
1982
๐
Elsevier Science
โ 183 KB
The role of aluminium in the interaction
โ
Jacques Jupille
๐
Article
๐
1982
๐
Elsevier Science
๐
English
โ 271 KB
In situ STM imaging of high temperature
โ
A. Feltz; U. Memmert; R.J. Behm
๐
Article
๐
1992
๐
Elsevier Science
๐
English
โ 665 KB
Gas phase etching of Si( 111) (7 x 7) surfaces, by reaction with O2 at zz 950 K, was directly followed by in situ STM imaging. The reaction mechanism was found to strongly depend on the density of structural defects in the respective (7 X 7) surface layer, which can act as nucleation centers for pit
The diffusion doping of Cu crystals with
โ
Madito, M.J.; Swart, H.C.; Terblans, J.J.
๐
Article
๐
2013
๐
Elsevier Science
๐
English
โ 901 KB
The interaction of oxygen with the Mo(10
โ
C. Zhang; M.A. Van Hove; G.A. Somorjai
๐
Article
๐
1985
๐
Elsevier Science
โ 53 KB