Surface reaction mechanism of SiCl2 with carrier gas H2 in silicon vapor phase epitaxial growth

✍ Scribed by Yoshio Ohshita; Akihiko Ishitani; Toshikazu Takada

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 785 KB
• Volume: 108
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(91)90227-v