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Surface properties and performance in liquid junction cells of n-MoSe2 single crystals

✍ Scribed by L.Peraldo Bicelli; G. Razzini


Publisher
Elsevier Science
Year
1984
Weight
739 KB
Volume
22
Category
Article
ISSN
0376-4583

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## Abstract The current voltage characteristics of In / Cu with n‐type MoSe~2~ Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe~2~ shows ohmic behavior after annealing the contact at 100 Β°C for 12 h. The ohmic nature was retained at all