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Surface passivation of boron doped a-Si:H

✍ Scribed by Wu Zongyan; B. Equer; A. Lloret; R. Amokrane

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
293 KB
Volume
170
Category
Article
ISSN
0921-4526

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πŸ“œ SIMILAR VOLUMES

Copper passivation of boron in Si1βˆ’xGex
Copper passivation of boron in Si1βˆ’xGex alloys and boron reactivation kinetics
✍ M. Barthula; M.O. Aboelfotoh; F. Meyer πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 102 KB

Copper passivation of boron in SiGe layers has been investigated by the use of Schottky barrier structures prepared by the deposition of copper on boron-doped SiGe alloys at room temperature. The boron passivation occurs at room temperature after Cu deposition and diffusion in the alloy. The Cu diff