Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

✍ Scribed by Taking, S.; Banerjee, A.; Zhou, H.; Li, X.; Khokhar, A.Z.; Oxland, R.; McGregor, I.; Bentley, S.; Rahman, F.; Thayne, I.; Dabiran, A.M.; Wowchak, A.M.; Cui, B.; Wasige, E.

• Book ID: 118067468
• Publisher: The Institution of Electrical Engineers
• Year: 2010
• Tongue: English
• Weight: 208 KB
• Volume: 46
• Category: Article
• ISSN: 0013-5194
• DOI: 10.1049/el.2010.2781