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Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

✍ Scribed by J Zhou; J.E Reddic; M Sinha; W.S Ricker; J Karlinsey; J.-W Yang; M.A Khan; D.A Chen

Book ID
108417894
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
458 KB
Volume
202
Category
Article
ISSN
0169-4332

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Laue oscillations) appear close to the high-angle reflections. The film thickness can then be evaluated as: where W i and W i-1 are positions of adjacent satellite maxima.