Surface modification of medical implants and surgical devices using TiN layers
β Scribed by Bernard F. Coll; Patrick Jacquot
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 755 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0257-8972
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
NH 2 + ion implantation was performed at the energy of 80 keV with fluence of 2 Γ 10 16 ionsβ’cm -2 for indium tin oxide (ITO) film coated glass, and the existence of amino group on the ITO surface was verified by Fourier transform infrared (FT-IR) spectra and X-ray photoelectron spectroscopy (XPS) a
Silicon oxynitride (Si x O y N z ) buried layers were synthesized by high fluence (β₯ 1 Γ 10 17 ions-cm -2 ) ion implantation of O + and N + sequentially into single crystal silicon at 150 keV to produce silicon-on-insulator (SOI) structures. The structures of the SOI devices were analyzed by FTIR an