Damage and recovery by electron and ion
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H. Bender; W. D. Chen
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Article
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1990
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John Wiley and Sons
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English
⚖ 877 KB
## Abstract Damage and recovery induced by electron and ion beam irradiation during AES analysis of silicon nitride and oxynitrides are discussed. The results show that after prolonged electron beam irradiation, a damage peak is induced in the Si LVV spectrum. The initial incubation time decreases