Surface chemical and electronic properties of plasma-treated n-type Al0.5Ga0.5N

✍ Scribed by Cao, X. A. ;Piao, H. ;Li, J. ;Lin, J. Y. ;Jiang, H. X.

• Book ID: 105364443
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 164 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723119

✦ Synopsis

Abstract

The effects of plasma treatment on the surface properties of Si‐doped Al~0.5~Ga~0.5~N were studied by X‐ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N‐deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion‐induced compensating defects. Pre‐metal plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current–voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al~0.5~Ga~0.5~N even at 300 °C. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)