Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy

✍ Scribed by Chhabra, Bhumika ;Weiland, Conan ;Opila, Robert L. ;Honsberg, Christiana B.

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 478 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026101

✦ Synopsis

Abstract

Hydrogen‐terminated silicon substrates were passivated with quinhydrone–methanol (QHY/ME) and iodine–methanol (I~2~/ME), and the chemical changes occurring at the surface were investigated using X‐ray photoelectron spectroscopy (XPS). The XPS surface studies demonstrate that QHY/ME passivation provides reduced oxidation, less carbon contamination, and a chemically inert surface. Electrical characterization also demonstrates higher minority carrier lifetimes of QHY/ME passivated substrates as compared to I~2~/ME passivated substrates. The quality of surface treatment was also characterized using the contact angle measurement, which confirms the presence of a hydrophobic organic layer on the surface after QHY/ME passivation. magnified image
Si 2p XPS spectra of the QHY/ME, I~2~/ME samples, and H‐terminated silicon. With a peak at 102.9 eV for I~2~/ME, it is evident that it provides poor surface passivation than QHY/ME where no surface oxidation is observed.