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Surface and Phonon Assisted Diffusion of Positrons in Semiconductors

✍ Scribed by S. Y. Tang; M. Singh


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
300 KB
Volume
154
Category
Article
ISSN
0370-1972

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## Abstract The absorption coefficient of a disordered semiconductor, Ξ±(Ο‰), is calculated in the case of indirect transitions. The absorption coefficient is influenced by a random force field present in disordered semiconductors. The case of a smooth random field is considered. The same exponential