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Surface and interface effects in a-Si:H observed by transient grating spectroscopy

✍ Scribed by S. Komuro; Y. Aoyagi; Y. Segawa; S. Namba; A. Masuyama; H. Okamoto; Y. Hamakawa

Book ID
118332407
Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
189 KB
Volume
59-60
Category
Article
ISSN
0022-3093

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The a-Si N, ,:Hic-Si interface density of states is studied by the photocapacitance transient spectroscopy (PCTS) technique. After illumination with 4.13 eV photons, the PCTS reveals an interface defect creation while the midgap voltage shift indicates a hole injection from c-Si and subsequent hole