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Superconductivity of MgB2 sputtered thin films with aluminium nitride buffer layers

✍ Scribed by G. Ilonca; T.R. Yang; A.V. Pop; V. Toma; P. Balint; M. Bodea; D. Marconi; T. Jurcut

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
256 KB
Volume
460-462
Category
Article
ISSN
0921-4534

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✦ Synopsis

MgB 2 thin films were deposited, at low temperature substrates, in situ, on a polished c-cut sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-4 terminal method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, H c2 (T) and irreversibility field H irr (T) versus temperature were determinated. The Hall density of charge are slightly temperature dependence and positive in normal state. The critical temperature of 30-32 K and critical current density of 10 6 -10 7 A/cm 2 at 4, 2 K were obtained. Using extracted data, the coherence length n 0 , anisotropic coefficient c and penetration depth k L were calculated.

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