Superconductivity in a single-C60 transistor
โ Scribed by Winkelmann, Clemens B.; Roch, Nicolas; Wernsdorfer, Wolfgang; Bouchiat, Vincent; Balestro, Franck
- Book ID
- 109943541
- Publisher
- Nature Publishing Group
- Year
- 2009
- Tongue
- English
- Weight
- 836 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1745-2473
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๐ SIMILAR VOLUMES
London model allows. The higher the applied field, the more strongly the order parameter is suppressed and the more flux is accumulated in the near-edge layer. On the other hand, when the vortex jumps inside, the screening is restored to a significant extent and, accordingly, there is less flux in t
We investigate theoretically the electron transport in the C60 single electron transistors, based on the shuttle mechanism where charges are carried by the motion of C60 molecule. The gate voltage a ects directly the electron tunneling and indirectly the motion of C60 by shifting the center of vibra