Electron transport properties of C60 single electron transistor

✍ Scribed by Norihiko Nishiguchi

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 80 KB
• Volume: 18
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)01000-7

✦ Synopsis

We investigate theoretically the electron transport in the C60 single electron transistors, based on the shuttle mechanism where charges are carried by the motion of C60 molecule. The gate voltage a ects directly the electron tunneling and indirectly the motion of C60 by shifting the center of vibrations. The latter e ect stops the molecular movement at a large gate voltage, leading to the conduction gap that widens in proportion to the gate voltage.