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Superconducting and normal state properties of niobium-nitride thin films

โœ Scribed by Nigro, A; Nobile, G; Palmieri, V; Rubino, G; Vaglio, R

Book ID
125488471
Publisher
Royal Swedish Academy of Sciences
Year
1988
Tongue
English
Weight
244 KB
Volume
38
Category
Article
ISSN
0031-8949

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were obtained by keeping the power for the Nb deposition constant at 0.85 W/cm 2 (deposition rate of 1.7 nm/min) and changing the power for the Si deposition from 2 W/cm 2 (2.7 nm/min) to 5.1 W/cm 2 (6.7 nm/min). Per cycle about one monolayer NbSi is deposited. Series A contains 70% Nb and 30 % Si,