ZnMgTe/ZnTe/ZnMgTe layered structures were grown on (0 0 1) ZnTe substrates by molecular beam epitaxy. This structure was designed to apply to waveguides in various optoelectronic devices to reduce light loss. Since the lattice mismatch between ZnTe and ZnMgTe was not negligible, the critical layer
โฆ LIBER โฆ
Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy
โ Scribed by Jie Zhao; Yiping Zeng; Chao Liu; Yanbo Li
- Book ID
- 108166041
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 527 KB
- Volume
- 312
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Growth of ZnMgTe/ZnTe waveguide structur
โ
Y. Kumagai; S. Imada; T. Baba; M. Kobayashi
๐
Article
๐
2011
๐
Elsevier Science
๐
English
โ 352 KB
Structural properties of CdO layers grow
โ
Bong-Joong Kim; Y.-W. Ok; T.-Y. Seong; A.B.M.A. Ashrafi; H. Kumano; I. Suemune
๐
Article
๐
2003
๐
Elsevier Science
๐
English
โ 546 KB
Self-organized InAs/GaAs quantum dots gr
โ
Ming-Chin Chen; M.C Harris Liao; Hao-Hsiung Lin
๐
Article
๐
1998
๐
Elsevier Science
๐
English
โ 240 KB
Fabrication of as-grown MgB2 films on Zn
โ
Y. Harada; T. Takahashi; M. Kuroha; H. Iriuda; Y. Nakanishi; F. Izumida; H. Endo
๐
Article
๐
2006
๐
Elsevier Science
๐
English
โ 168 KB
The intermetallic superconductor magnesium diboride (MgB 2 ) is a promising candidate for use in superconducting electronic devices because its high transition temperature (T c ). These applications require the development of a high-quality film fabrication process. We report the first ever attempt
MOVPE growth and characterisation of ZnT
โ
N. Lovergine; M. Traversa; P. Prete; K. Yoshino; M. Ozeki; M. Pentimalli; L. Tap
๐
Article
๐
2003
๐
Elsevier Science
๐
English
โ 167 KB
Optical property of Fe/GaAs(0 0

โ
Y. Chye; V. Huard; M.E. White; B. Gerardot; P.M. Petroff
๐
Article
๐
2002
๐
Elsevier Science
๐
English
โ 110 KB