Substrate response of a floating gate n-channel MOS memory cell subject to a positive linear ramp voltage

✍ Scribed by Han-Sheng Lee; David Scott Lowrie

• Book ID: 103395838
• Publisher: Elsevier Science
• Year: 1981
• Tongue: English
• Weight: 736 KB
• Volume: 24
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(81)90090-3