Substrate response of a floating gate n-channel MOS memory cell subject to a positive linear ramp voltage: Han-Sheng Lee and David Scott Lowrie. Solid-St. Electron.24, 267 (1981)

• Book ID: 103280276
• Publisher: Elsevier Science
• Year: 1981
• Tongue: English
• Weight: 134 KB
• Volume: 21
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(81)90182-7