A discrete model of substitutional-inter
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M. T. Hearne; T. G. Rogers; B. Tuck
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Article
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1988
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John Wiley and Sons
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English
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A discrete model is developed to describe the diffusion of dopanthmpurity in a single semiconductor crystal during Czochralski growth. The basic diffusion mechanism is assumed to be substitutional-interstitial interchange for the impurity, together with self-diffusion of the host atoms. In particula