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Substitutional-interstitial diffusion in semiconductors

โœ Scribed by Zahari, M D; Tuck, B


Book ID
120225587
Publisher
Institute of Physics
Year
1985
Tongue
English
Weight
594 KB
Volume
18
Category
Article
ISSN
0022-3727

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๐Ÿ“œ SIMILAR VOLUMES


A discrete model of substitutional-inter
โœ M. T. Hearne; T. G. Rogers; B. Tuck ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 698 KB

A discrete model is developed to describe the diffusion of dopanthmpurity in a single semiconductor crystal during Czochralski growth. The basic diffusion mechanism is assumed to be substitutional-interstitial interchange for the impurity, together with self-diffusion of the host atoms. In particula