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Substitutional and interstitial oxygen in wurtzite GaN

✍ Scribed by Wright, A. F.

Book ID: 120933080
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 962 KB
Volume: 98
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2137446

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## Abstract The partial dislocations in wurtzite‐structured GaN are reviewed and new results are presented. A multiplicity of partials is possible depending on stacking fault (SF) type, orientation, and interactions. The partials that delimit the __I__~1~ intrinsic basal SFs have 5/7, 8, or 12‐atom