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Partial dislocations in wurtzite GaN

✍ Scribed by Ph. Komninou; J. Kioseoglou; G. P. Dimitrakopulos; Th. Kehagias; Th. Karakostas

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
926 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The partial dislocations in wurtzite‐structured GaN are reviewed and new results are presented. A multiplicity of partials is possible depending on stacking fault (SF) type, orientation, and interactions. The partials that delimit the I~1~ intrinsic basal SFs have 5/7, 8, or 12‐atom cores as more probable configurations. The core structures of 90° partial dislocations with 1/6〈20$ \bar 2 $3〉 Burgers vector were studied from high resolution transmission electron microscopy observations in comparison with simulated models obtained from energetic calculations. Two cases were distinguished with one structure involving a 5/7 or 12‐atom ring core and the other an 8‐atom ring core. Another type of partials, in particular dislocations accommodating mirror variants of basal SFs were also studied experimentally. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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