## Abstract The partial dislocations in wurtziteβstructured GaN are reviewed and new results are presented. A multiplicity of partials is possible depending on stacking fault (SF) type, orientation, and interactions. The partials that delimit the __I__~1~ intrinsic basal SFs have 5/7, 8, or 12βatom
β¦ LIBER β¦
Perfect Dislocations in the Wurtzite Lattice
β Scribed by Yu. A. Osipiyan; I. S. Smirnova
- Publisher
- John Wiley and Sons
- Year
- 1968
- Tongue
- English
- Weight
- 588 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0370-1972
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