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Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wells

✍ Scribed by R. Kersting; X.Q. Zhou; K. Wolter; D. Grützmacher; H. Kurz


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
328 KB
Volume
7
Category
Article
ISSN
0749-6036

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The photoluminescence (PL) properties of undoped \(\operatorname{InGaAs} / \mathrm{InP}\) quantum wires are studied in a magnetic field up to \(16 \mathrm{~T}\). The quantum wires are fabricated with a combination of electron-beam lithography, reverse mesa wet etching, and metal organic-vapour-phase