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Dependence of hot carrier luminescence on barrier thickness in GaAs/AlGaAs superlattices and multiple quantum wells

โœ Scribed by A.J. Nozik; C.A. Parsons; D.J. Dunlavy; B.M. Keyes; R.K. Ahrenkiel


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
459 KB
Volume
75
Category
Article
ISSN
0038-1098

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We report on the carrier dynamics in n-type double-barrier quantum well structures in an electric field. Both the intersubband and interband photocurrents, excited by long-wavelength \((4 \mu \mathrm{m})\) and short-wavelength \((0.5 \mu \mathrm{m})\) radiation, respectively, show a photovoltaic asy