This study concerns InGaAsP laser diodes with ptype substrates and with leak currents that can be ignored at room temperature. We investigate the radiative recombination coefficient and the Auger recombination coefficient based on the delay time of laser oscillation from the pulse current applied to
Subnanosecond carriers lifetime measurement in 1.3μ InGaAsP
✍ Scribed by Bernard Sermage; Jean Louis Benchimol; Jonathan Paul Heritage
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 158 KB
- Volume
- 31-32
- Category
- Article
- ISSN
- 0022-2313
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.
We investigated thermal-lensing effects in a side-pumped 1.3 lm Nd:YVO 4 slab laser amplifier having a bounce geometry. The thermal-lens power during 1.3 lm laser action was 1.3-times larger than that without laser action. Excited-state absorption is the main cause for increased heat loading during