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Submillimetre cyclotron resonance measurement of the effective masses of the holes in p-type GaP

✍ Scribed by C.C. Bradley; P.E. Simmonds; J.R. Stockton; R.A. Stradling


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
301 KB
Volume
12
Category
Article
ISSN
0038-1098

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## Abstract The effect of charge carrier overheating is studied in the p‐type Si/Si~0.87~Ge~0.13~/Si heterostructure. The hole temperature __T__~h~ can be calculated using three different methods: From a comparison of the changes in the amplitude of the Shubnikov‐de Haas oscillations under the infl