Sub-100 nm lithography and high aspect-ratio masks for fabrication of Josephson devices by ion implantation

Fabrication of high-aspect-ratio submicr

Fabrication of high-aspect-ratio submicron-to-nanometer range microstructures in LiNbO3 for the next generation of integrated optoelectronic devices by focused ion beams (FIB)

✍ Shizhuo Yin 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 150 KB 👁 2 views

The fabrication of high-aspect-ratio submicron-to-nanometer range microstructures in LiNbO using a state-of-the-art Schlum-3 ( ) berger AMS 3000 focused ion-beam FIB system is presented. The submicron structures with about 350 nm width and 1600 nm depth are fabricated by employing XeF gas-assisted g