Fabrication of high-aspect-ratio submicron-to-nanometer range microstructures in LiNbO3 for the next generation of integrated optoelectronic devices by focused ion beams (FIB)
✍ Scribed by Shizhuo Yin
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 150 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
The fabrication of high-aspect-ratio submicron-to-nanometer range microstructures in LiNbO using a state-of-the-art Schlum-3 ( ) berger AMS 3000 focused ion-beam FIB system is presented. The submicron structures with about 350 nm width and 1600 nm depth are fabricated by employing XeF gas-assisted gallium ion-beam etching with 2 50 pA of ion-beam current. A ¨ariety of optoelectronic de¨ices such as microsensors, directional couplers, extremely compact electro-optic modulators, and wa¨elength filters could be built based on this type of high-aspect-ratio submicron structure in LiNbO , which may lead to the 3 next generation of integrated optoelectronic de¨ices that ha¨e higher le¨els of de¨ice integration and enhanced functionality.