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Study on the growth, etch morphology and spectra of Y2SiO5 crystal

✍ Scribed by Huiyong Pang; Guangjun Zhao; Mingyin Jie; Jun Xu; Xiaoming He


Book ID
113789045
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
195 KB
Volume
59
Category
Article
ISSN
0167-577X

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## Abstract γ‐LiAlO~2~ single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X‐ray rocking curve and chemical etching. The effects of air‐annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiA