Growth, etching morphology and spectra of LiAlO2 crystal

✍ Scribed by Taohua Huang; Shengming Zhou; Hao Teng; Hui Lin; Jun Wang

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 208 KB
• Volume: 43
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200711171

✦ Synopsis

Abstract

γ‐LiAlO~2~ single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X‐ray rocking curve and chemical etching. The effects of air‐annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO~2~ were also investigated in detail. The results show that the as‐grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7‐22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0×10^3^ cm^–2^. The VTE‐treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air‐annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)