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Study on the carrier concentration in n-GaAs homojunction multilayer structures by reflection spectroscopy

โœ Scribed by Y.H. Zhang; J.H. Sun; X.Y. Chen; W.Z. Shen

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
249 KB
Volume
348
Category
Article
ISSN
0921-4526

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We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole