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Study on GaN-based light emitting diodes grown on 4-in. Si (111) substrate

✍ Scribed by Wang, Mei-Yu; Zhang, Guo-An; Zhang, Zhen-Juan; Shi, Min; Huang, Jing; Zhu, You-hua; Egawa, Takashi


Book ID
122274590
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
899 KB
Volume
326
Category
Article
ISSN
0030-4018

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## Abstract We report the fabrication of GaN/AlGaN nanocolumn LEDs on n‐(111) Si substrates by RF‐MBE for the first time. Clear diode characteristics with a turn‐on voltage of 4 V and an ultraviolet emission spectrum with a peak wavelength of 354 nm were observed at room temperature. When the Al co