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InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

✍ Scribed by D. Deng; N. Yu; Y. Wang; X. Zou; H. Kuo; P. Chen; K. M. Lau


Book ID
121846545
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
483 KB
Volume
96
Category
Article
ISSN
0003-6951

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Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for