Study on defects and confined energy level of InAs/GaAs quantum dot system
β Scribed by J.S. Kim; E.K. Kim; S.J. Lee; S.K. Noh
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 152 KB
- Volume
- 376-377
- Category
- Article
- ISSN
- 0921-4526
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π SIMILAR VOLUMES
Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 β’ C. The use of n-and p-type GaAs matrices allows u
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum