STUDY OF TRAPPING RATE AND DEFECT DENSITY IN AlSi 11.35 Mg 0.23 BY POSITRON ANNIHILATION TECHNIQUE

✍ Scribed by ABDEL-RAHMAN, M. A.; ABDALLAH, M. S.; BADAWI, EMAD A.

• Book ID: 126041923
• Publisher: World Scientific Publishing Company
• Year: 2004
• Tongue: English
• Weight: 322 KB
• Volume: 11
• Category: Article
• ISSN: 0218-625X
• DOI: 10.1142/S0218625X0400630X