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Study of thin silicon nitride films toy isothermal depolarization of mnos structures

โœ Scribed by Efimov, V. M.

Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
672 KB
Volume
65
Category
Article
ISSN
0031-8965

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Silicon nitride (SiN x ) films were prepared by ion-assisted deposition process. The films were analyzed by measurement of scanning electron microscopy (SEM), Fourier transform infrared spectrometry (FTIR), Xray photoelectron spectrometry, spectrophotometer, and ellipsometer measurements. The effect