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Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

✍ Scribed by Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y


Book ID
120651318
Publisher
Institute of Physics
Year
2008
Tongue
English
Weight
431 KB
Volume
19
Category
Article
ISSN
0957-4484

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First-principles simulations of the leak
✍ Mao, L. F. ;Wang, Z. O. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 198 KB

## Abstract HfO~2~ high‐__K__ gate dielectric has been used as a new gate dielectric in metal–oxide–semiconductor structures. First‐principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of