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Study of the photoluminescence instability of porous silicon under light illumination

โœ Scribed by I.M. Chang; J.C. Fan; Y.F. Chen

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
629 KB
Volume
100
Category
Article
ISSN
0038-1098

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Effect of chemical etching combined with
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โœ J.Q. Duan; B.R. Zhang; L.Z. Zhang; J.C. Mao; G.G. Qin ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 174 KB

We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat