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Study of the milling of silicon nitride powders of various origins in an attritor

✍ Scribed by L. T. Gankevich; S. G. Titov; S. L. Bochkov; T. Kh. Uzbekova; E. M. Cherednik; A. F. Kuteinikov


Publisher
Springer
Year
1987
Tongue
English
Weight
265 KB
Volume
26
Category
Article
ISSN
1573-9066

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XPS and x-ray-induced AES have been used to study the reaction layers formed on silicon powder samples heated in ultra-high purity nitrogen at temperatures between 1100 and 1200 "C. An equation was derived to calculate the average surface reaction layer thicknesses from the silicon AES spectra. The