𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Study of the irradiation damage in SiC by ion channeling

✍ Scribed by M. Kokkoris; S. Kossionides; A. Kyriakis; K. Zachariadou; G. Fanourakis; R. Vlastou; Th. Paradellis

Book ID
114165297
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
180 KB
Volume
188
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Rutherford backscattering spectrometry c
Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC
✍ Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 158 KB πŸ‘ 2 views

Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γ‘uences ranging from 7.5 Γ‚ 1017 to 1 Γ‚ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc