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Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

โœ Scribed by M. Mattalah; A. Telia; A. Soltani; J.-C. De Jaeger; P. Thevenin; A. Bath; B. Akkal; H. Abid


Book ID
108289928
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
408 KB
Volume
516
Category
Article
ISSN
0040-6090

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The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A a