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Study of the electrical activation of Si[sup +]-implanted InGaAs by means of Raman scattering

✍ Scribed by Hernández, S.; Cuscó, R.; Blanco, N.; González-Dı́az, G.; Artús, L.


Book ID
120472304
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
305 KB
Volume
93
Category
Article
ISSN
0021-8979

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