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Study of the effect of electron irradiation on a GaSe-SiO2structure by spectroscopic methods

✍ Scribed by T. D. Ibragimov; E. A. Dzhafarova; Z. B. Safarov

Book ID
110131720
Publisher
Springer
Year
2002
Tongue
English
Weight
45 KB
Volume
36
Category
Article
ISSN
1063-7826

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✍ A.F. Zatsepin; S. Kaschieva; S.N. Dmitriev; E.A. Buntov πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 216 KB

Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created