## Abstract Growing conditions for TGS single crystals doped with Cu or Co ions are given in a table. ε and tg δ values in growth pyramids depend on crystal growing temperature and the incorporated impurity: Cu^2+^ ions increase the temperature hysteresis of the dielectric permeabilty. Incorporatio
Study of the domain structure of GASH single crystals and its correlation with their dielectric and switching behaviour
✍ Scribed by L. Szcześniak; M. Śliwa; B. Hilczer; K. P. Meyer; R. Margraf
- Publisher
- John Wiley and Sons
- Year
- 1976
- Tongue
- English
- Weight
- 526 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0232-1300
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