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Study of the ambipolar carrier expansion in silicon by an optical time-of-flight method

✍ Scribed by B. Laurich; A. Forchel; H. Hillmer; T.X. Hoai; A. Axmann

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
142 KB
Volume
31-32
Category
Article
ISSN
0022-2313

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## Abstract Three‐dimensional (3D) time‐of‐flight (TOF) is now commonly used in routine magnetic resonance angiography (MRA) studies of the head and neck. However, there are limits to its diagnostic abilities in the clinical field and, in some instances, a more invasive supplementary examination ma