Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

✍ Scribed by Olsen, S.H.; O'Neill, A.G.; Chattopadhyay, S.; Driscoll, L.S.; Kwa, K.S.K.; Norris, D.J.; Cullis, A.G.; Paul, D.J.

• Book ID: 118698604
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 995 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2004.830652