𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Study of piezoresistance in GexSi1−x whiskers for sensor application

✍ Scribed by Anatolij Druzhinin; Igor Ostrovskii; Natalia Liakh

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
378 KB
Volume
8
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

✦ Synopsis

The piezoresistance of Ge x Si 1Àx (x ¼ 0:0120:05) solid solution whiskers with impurity concentrations in the vicinity to metal-insulator transition at the temperature range 4.2-300 K was studied. A 'giant' piezoresistance was found at low temperatures (To50 K) in the samples. The absolute magnitude of the gauge factor depends on the doping level and for the whiskers with r 300 K ¼ 0:018 O cm it is around 3.4 Â 10 4 at the temperature 4.2 K. The observed effect was used for design of high sensitive strain sensors.

📜 SIMILAR VOLUMES

Performance studies of a monolithic scin
Performance studies of a monolithic scintillator-CMOS image sensor for X-ray application
✍ Bo Kyung Cha; Jun Hyung Bae; Byoung-Jik Kim; Hosang Jeon; Gyuseong Cho 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 596 KB

We proposed the direct deposition of CsI(Tl) scintillator layer with pixelated structure on a CMOS image sensor (CIS) in order to improve the spatial resolution. CMOS sensors developed for test have a 128 Â 128 photodiode array with 50 mm pixel pitch and integrated readout-electronics including a 10