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Study of photoluminescence and computation of configuration coordinate diagram of Cu related deep levels in InP

✍ Scribed by D Pal; N Bose

Book ID
110659432
Publisher
Springer-Verlag
Year
1997
Tongue
English
Weight
323 KB
Volume
20
Category
Article
ISSN
0250-4707

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The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A a